Nonlinear Scattering Lithography
AssigneeVathys, Inc.
InventorTapabrata Ghosh
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Abstract
Disclosed are systems and methods for achieving sub-diffraction limit resolutions for fabrication of integrated circuits using multiphoton lithography. In one embodiment, a photolithography system is disclosed. The system includes a light source, which can generate and emit laser beams at various wavelengths; a reflector configured to receive the laser beams and focus the laser beams on a condensing lens; a scattering medium, configured to receive the laser beams and generate scattered laser beams; and a wave-front shaping module, configured to receive the scattered laser beams and generate a focused laser beam in a photoresist material deposited on a silicon wafer.
Claims20
A photolithography system comprising:
- a light source, configured to emit laser beams at a plurality of wavelengths;
- a reflector configured to receive the laser beams and focus the laser beams on a condensing lens;
- a scattering medium, configured to receive the laser beams and generate scattered laser beams;
- a wave-front shaping module, configured to receive the scattered laser beams and generate a focused laser beam on a silicon wafer, wherein the silicon wafer comprises a nonlinear photoresist material, wherein the nonlinear photoresist material interacts with the focused laser beam to form a pattern in the nonlinear photoresist material, wherein the light source is configured to vary the wavelength of the emitted lasers based at least partly on the pattern to be formed in the nonlinear photoresist material.
The system of claim, 1, wherein the wave-front shaping module further comprises:
- a photolithography mask, comprising the pattern to be formed in the nonlinear photoresist material;
- and
- a distortion compensation pattern configured to receive the scattered laser beams and generate a focused laser beam on the nonlinear photoresist material, based at least partly on the pattern to be formed in the nonlinear photoresist material.
A method of photolithography comprising:
- depositing a nonlinear photoresist material on a silicon wafer;
- selectively emitting laser beams from a light source at a plurality of wavelengths, wherein the wavelengths are chosen based at least partly on a pattern to be formed in the nonlinear photoresist material;
- reflecting the laser beams by a reflector;
- receiving the laser beams by a condensing lens;
- scattering the laser beams by a scattering medium, generating scattered laser beams;
- and
- receiving the scattered laser beams by a wave-front shaping module and generating a focused laser beam on or within the nonlinear photoresist material deposited on the silicon wafer.
The method of claim, 10, wherein the wave-front shaping module further comprises:
- a photolithography mask, comprising the pattern to be formed in the nonlinear photoresist material deposited on the silicon wafer;
- and
- a distortion compensation pattern configured to receive the scattered laser beams and generate a focused laser beam in the nonlinear photoresist material deposited on the silicon wafer, based at least partly on the pattern to be formed in the nonlinear photoresist material.
A photolithography system, comprising:
- means for emitting laser beams from a light source at a plurality of wavelengths;
- means for reflecting the laser beams by a reflector;
- means for receiving the laser beams by a condensing lens;
- means for scattering the laser beams by a scattering medium, generating scattered laser beams;
- and
- means for receiving the scattered laser beams by a scattering medium and generating a focused laser beam in a nonlinear photoresist material deposited on a silicon wafer.
Dependencies are inferred from the claim text.