Silicon-based nanowire, preparation method thereof, and thin film transistor

Abstract

The present disclosure discloses a silicon-based nanowire, a preparation method thereof, and a thin film transistor. By using a eutectic point of catalyst particles and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon, and due to absorption of the amorphous silicon by the molten catalyst particles to form a supersaturated silicon eutectoid, the silicon nucleates and grows into silicon-based nanowires. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide slots under the action of the catalyst particles, and reverse growth of the silicon-based nanowire is restricted by the retaining walls, thus obtaining silicon-based nanowires with a high density and high uniformity. Furthermore, by controlling the size of the catalyst particles and the thickness of the amorphous silicon film, the width of the silicon-based nanowire may also be controlled.

Dependencies are inferred from the claim text.