Photo-decomposable compound, photoresist composition including the same, and method of manufacturing integrated circuit device

A photoresist composition, comprising:

• a chemically amplified polymer;
• a solvent;
• and
• a photo-decomposable compound that includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group, the cation component forming a complex with the anion component, wherein:
• at least one of the adamantyl group and the C5 to C40 cyclic hydrocarbon group has a substituent that decomposes by an action of acid and generates an alkali soluble group, and
• the substituent includes an acid-labile protecting group.

A method of manufacturing an integrated circuit (IC) device, the method comprising:

• providing a substrate that includes a feature layer;
• forming a photoresist film on the feature layer, wherein:
• the photoresist film includes a chemically amplified polymer, a photo-decomposable compound, and a solvent,
• the photo-decomposable compound has an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component,
• at least one of the adamantyl group and the C5 to C40 cyclic hydrocarbon group has a substituent,
• the substituent decomposes in response to an acid to generate an alkali soluble group, and
• the substituent includes an acid-labile protecting group;
• exposing a first area of the photoresist film to generate a plurality of acids from the photo-decomposable compound in the first area, and deprotecting the chemically amplified polymer due to the plurality of acids, the first area being a portion of the photoresist film;
• removing the exposed first area of the photoresist film using a developer to form a photoresist pattern, the photoresist pattern including a non-exposed area of the photoresist film;
• and
• processing the feature layer using the photoresist pattern.