Display device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising:

• a step of forming a first dielectric layer on a substrate;
• a step of forming a transmissive layer on the first dielectric layer;
• and
• a step of forming a second dielectric layer on the transmissive layer,
• wherein the step of forming the transmissive layer includes:
• a step of forming, on the first dielectric layer, a first film configuring part of the transmissive layer by a third film thickness;
• a step of selectively forming a first etching stopper layer on the first film;
• a step of forming a second film configuring part of the transmissive layer so as to cover the first film and the first etching stopper layer;
• a step of selectively forming, on the second film, a second etching stopper layer partially overlapped with the first etching stopper layer in cross-sectional view;
• a step of forming a third film configuring part of the transmissive layer so as to cover the second film and the second etching stopper layer;
• a step of selectively forming, on the third film, a third etching stopper layer partially overlapped with the second etching stopper layer in cross-sectional view;
• a first removing step of removing, with the third etching stopper layer as an etching mask of dry etching, the second film and the third film on the first etching stopper layer except for a portion overlapped with the second etching stopper layer, and the third film on the second etching stopper layer except for a portion overlapped with the third etching stopper layer;
• and
• a second removing step of removing the first etching stopper layer except for the portion overlapped with the second etching stopper layer, the second etching stopper layer except for the portion overlapped with the third etching stopper layer, and the third etching stopper layer.