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AssigneesUnity Semiconductor Corporation, Commissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsJean-François BOULANGER, Stéphane GODNY
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A method and related device for measuring the profile of a surface of an object to be measured having zones made from at least two different materials, the object to be measured forming part of a plurality of substantially identical objects, the plurality of objects also including at least one reference object having at least one reference surface, the method including the following steps: determining a correction function, from a first profile signal of a first reference surface and a second profile signal from a second reference surface, the second reference surface being metallized; acquiring a profile signal from the surface of the object to be measured; and applying the correction function to the profile signal from the surface of the object to be measured to obtain a corrected profile signal; the profile signals being obtained from interferometric measurements.
A method for measuring the profile of a surface of an object to be measured, in particular comprising zones or structures made from at least two different materials, the object to be measured forming part of a plurality of substantially identical objects, the plurality of objects also comprising at least one reference object having at least one reference surface, the method comprising the following steps:
A device for measuring the profile of a surface of an object to be measured, the surface having zones made from at least two different materials, the object to be measured forming part of a plurality of substantially identical objects, the plurality of objects also including at least one reference object having at least one reference surface, the device comprising:
Dependencies are inferred from the claim text.