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US 2021/0232048 A1Published application
Resist composition and pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Takayuki Fujiwara
Life of this patent
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Abstract
A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2).
Claims12
A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2):
- wherein m is an integer of 1 to 3, n is an integer of 1 to 3,
- XBI is bromine or iodine,
- R is a C1-C20 (m+1)-valent aliphatic hydrocarbon group which may contain at least one selected from fluorine, chlorine, a hydroxyl group, a carboxyl group, a C6-C12 aryl group, an ether bond, an ester bond, a carbonyl group, an amide bond, a carbonate group, a urethane bond, or a urea bond,
- L1 is a C1-C20 hydrocarbylene group which may contain a single bond or a heteroatom when n is 1, or a C1-C20 (n+1)-valent hydrocarbon group which may contain a heteroatom when n is 2 or 3,
- L2 is a single bond, an ester bond, or an ether bond,
- L3 is a single bond or a C1-C10 aliphatic hydrocarbylene group,
- Rf1 to Rf4 are each independently hydrogen, fluorine, or a trifluoromethyl group, at least one of Rf1 to Rf4 being fluorine or a trifluoromethyl group, Rf1 and Rf2, taken together, may form a carbonyl group,
- R1 to R5 are each independently a C1-C20 hydrocarbyl group which may contain a heteroatom, and R1 and R2 may bond together to form a ring with the sulfur atom to which they are attached.
5 more elements
Dependencies are inferred from the claim text.