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US 2021/0231753 A1Published application
Magnetoresistive devices and methods for forming the same
AssigneeVanguard International Semiconductor Corporation
InventorsChien-Hsun WU, Cheng-Ping CHANG, Chien-Hui LI, Tai-I YANG, Yung-Hsiang CHEN
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Abstract
A magnetoresistive device includes a magnetoresistor disposed over a substrate, a stress release structure covering a side surface of the magnetoresistor, an electrical connection structure disposed over the magnetoresistor, and a passivation layer disposed over the electrical connection structure and the stress release structure.
Claims20
A magnetoresistive device, comprising:
- a magnetoresistor disposed over a substrate;
- a stress release structure covering a side surface of the magnetoresistor;
- an electrical connection structure disposed over the magnetoresistor;
- and
- a passivation layer disposed over the electrical connection structure and the stress release structure.
2 more elements
A method for forming a magnetoresistive device, comprising:
- forming a magnetoresistor over a substrate;
- forming a dielectric material over the magnetoresistor;
- etching the dielectric material to form a stress release structure surrounding a side surface of the magnetoresistor;
- forming an electrical connection structure over the magnetoresistor;
- and
- forming a passivation layer covering the electrical connection structure and the stress release structure.
3 more elements
Dependencies are inferred from the claim text.