Method for producing silicon carbide single crystal

A method for producing a silicon carbide single crystal in which a single crystal of silicon carbide is grown on a silicon carbide seed crystal placed inside a crucible by using a guide member to guide a source gas to the silicon carbide seed crystal side, wherein the guide member has one end positioned in the vicinity of the silicon carbide seed crystal, and the method comprising:

• a single crystal growth step of growing a silicon carbide single crystal in a manner so as to not completely close a gap between a side surface of the silicon carbide single crystal growing on the silicon carbide seed crystal, and an inner-side surface of the guide member and a crystal deposited on the inner-side surface of the guide member;
• a crystal growth termination step of terminating crystal growth by lowering a temperature;
• and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, Pin-Pout, between a partial pressure Pin of Si2C in a source gas in the vicinity of an inlet of the gap and a partial pressure Pout of Si2C in a source gas in the vicinity of an outlet of the gap, at 0.18 torr or less.