Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device

omprising the joined body according to claim 8.

A member for a semiconductor manufacturing device, the

A method for producing a dense composite material, the method comprising the steps of:

• (a) preparing a powder mixture, the powder mixture including silicon carbide in an amount of 24 to 45 mass % and titanium silicide in an amount of 42 to 67 mass %, the silicon carbide having an average particle diameter of 10 to 25 gm, the titanium silicide having an average particle diameter of less than 10 μm, the powder mixture further including titanium metal having an average particle diameter of less than 20 μm or titanium carbide having an average particle diameter of less than 10 μm;
• and
• (b) sintering the powder mixture in a hot press at a temperature of 1350 to 1430° C. in an inert atmosphere.