Quantum Well Structure for Polarized Semiconductors

Abstract

The invention relates to an apparatus, system and method for reducing or eliminating polarization effects in a compound semiconductor quantum well optical gain structure including the quantum confined Stark effect (QCSE) and carrier leakage effects. The system comprises a quantum well formed by a monotonic, stepwise and/or continuous compositional grading of a first quantum well interface toward a reduced bandgap, also including a monotonic, stepwise or continuous compositional grading of a second quantum well interface toward an increased bandgap thereby creating a quantum well shape that is substantially symmetric under the influence of electrostatic and/or electrodynamic fields. The system also comprises an electron blocking layer formed by a stepwise or continuous compositional grading starting from the maximum bandgap of the quantum well and increasing toward a larger bandgap, thereby creating a barrier shape with reduced electron sheet charge due to the influence of electrostatic fields.

Dependencies are inferred from the claim text.