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US 2021/0202870 A1Published application
Infrared-Emitting Quantum Dots and Methods for Making Same
AssigneeGeorgia Tech Research Corporation
InventorsYoung Jun Yoon, Zhiqun Lin, Zhitao Kang, Brent Wagner, Jonathan Christopherv James
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Abstract
The disclosed technology includes an infrared-emitting quantum dot comprising a core comprising a first semiconductor material, a shell comprising a second semiconductor material, and a gradient interface between the core and the shell. The disclosed technology also includes methods of manufacturing the same.
Claims20
An infrared-emitting quantum dot comprising:
- an inner core comprising a first semiconductor material;
- an outer shell comprising a second semiconductor material;
- and
- a gradient interface between the core and the shell, the gradient interface comprising the first and second semiconductor materials.
1 more element
A method of manufacturing a plurality of infrared-emitting quantum dots, the method comprising:
- synthesizing a plurality of nanotemplate quantum dots;
- and
- performing a cation exchange reaction, thereby transforming the plurality of nanotemplate quantum dots into the plurality of infrared-emitting quantum dots.
A quantum dot panel comprising:
- a substantially transparent substrate;
- and
- a plurality of infrared-emitting quantum dots disposed on a surface of the substantially transparent substrate, each of the plurality of infrared-emitting quantum dots comprising:
- a first semiconductor core comprising at least one of PbSe, Ag2Se, and HgSe;
- a second semiconductor shell comprising at least one of PbS, Ag2S, and HgS;
- and
- a gradient interface between the core and the shell, the gradient interface comprising at least one of PbSe1-ySy, Ag2Se1-xSx, and HgSe1-xSx.
4 more elements
Dependencies are inferred from the claim text.