Microswitch and electronic device in which same is used

A method of manufacturing a microswitch for a CB-RAM, the method comprising:

• forming a porous coordination polymer by mixing a metal ion and a ligand with each other;
• bringing the porous coordination polymer into contact with first and second electrodes;
• and
• forming a porous coordination polymer conductor by mixing the porous coordination polymer in contact with the first and second electrodes and a conductivity aid with each other,
• wherein the metal ion is selected from group 2 to group 13 elements in a periodic table,
• the ligand has two or more functional groups capable of coordination to the metal ion in a structure of the ligand and is crosslinkable with two metal ions,
• the conductivity aid is a material that includes no metal element, and
• a metal forming the first electrode and a metal forming the second electrode have different oxidation-reduction potentials.

A method of manufacturing a microswitch, the method comprising:

• forming a porous coordination polymer conductor by mixing a metal ion, a ligand, and a conductivity aid with each other;
• and
• bringing the porous coordination polymer conductor into contact with first and second electrodes,
• wherein the metal ion is selected from group 2 to group 13 elements in a periodic table,
• the ligand has two or more functional groups capable of coordination to the metal ion in a structure of the ligand and is crosslinkable with two metal ions,
• the conductivity aid is a material that includes no metal element, and
• a metal forming the first electrode and a metal forming the second electrode have different oxidation-reduction potentials.