Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHERN-YOW HSU, SHIH-CHANG LIU
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Abstract
The present disclosure provides a semiconductor structure including a first electrode via, a first electrode on the first electrode via, a magnetic tunneling junction (MTJ) over the first electrode, a second electrode over the MTJ, a first dielectric layer on the first electrode via, a second dielectric layer on the first dielectric layer. The first dielectric layer is a planar layer. A sidewall of the MTJ is in contact with the second dielectric layer, and a bottom surface of the second dielectric layer is higher than a bottom surface of the first electrode.
Claims20
A semiconductor structure, comprising:
- a first electrode via;
- a first electrode on the first electrode via;
- a magnetic tunneling junction (MTJ) over the first electrode;
- a second electrode over the MTJ;
- a first dielectric layer on the first electrode via, wherein the first dielectric layer is a planar layer;
- and
- a second dielectric layer on the first dielectric layer, wherein a sidewall of the MTJ is in contact with the second dielectric layer, and a bottom surface of the second dielectric layer is higher than a bottom surface of the first electrode.
A semiconductor structure, comprising:
- a first electrode via;
- a first electrode on the first electrode via;
- a magnetic tunneling junction (MTJ) over the first electrode;
- a second electrode over the MTJ;
- a first dielectric layer on the first electrode via, wherein the first dielectric layer is a planar layer;
- a second dielectric layer on the first dielectric layer, wherein a sidewall of the MTJ is in contact with the second dielectric layer;
- and
- a third dielectric layer over the second dielectric layer, wherein a top surface of the third dielectric layer is coplanar with a top surface of the second electrode.
A semiconductor structure, comprising:
- a first electrode via;
- a first electrode on the first electrode via;
- a magnetic tunneling junction (MTJ) over the first electrode;
- a second electrode over the MTJ;
- a first dielectric layer on a top surface of the first electrode via;
- and
- a second dielectric layer over the first dielectric layer, wherein a sidewall of the MU is in contact with the second dielectric layer;
- wherein the first electrode is laterally surrounded by the first dielectric layer and the second dielectric layer.
Dependencies are inferred from the claim text.