Display device
AssigneeLG Display Co., Ltd.
InventorsKyungMo SON, ShunYoung YANG
Life of this patent
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Abstract
Embodiments of the present invention relate to a display device in which, in a structure in which an oxide semiconductor thin film transistor is disposed on an upper layer of a low temperature polycrystalline silicon thin film transistor, the hydrogen adsorption layer is disposed on the capacitor electrode located on the driving transistor among low temperature polycrystalline silicon thin film transistors, so that it is possible to prevent the reduction of an S factor due to the re-hydrogenation of the driving transistor in the heat treatment process of the oxide semiconductor thin film transistor.
Claims25
A display device comprising:
- a plurality of first thin film transistors disposed on a substrate;
- at least one insulation layer disposed on at least one of the plurality of first thin film transistors;
- a plurality of second thin film transistors disposed on the at least one insulation layer;
- and
- a capacitor electrode including a hydrogen adsorption layer disposed between at least some first thin film transistors among the plurality of first thin film transistors and the at least one insulation layer and disposed on at least one of upper and lower surfaces of the capacitor electrode.
A display device comprising:
- a plurality of first thin film transistors disposed on a substrate;
- a plurality of insulation layers located on one of the plurality of first thin film transistors;
- a plurality of second thin film transistors disposed on one of the plurality of insulation layers;
- a capacitor electrode disposed between at least some first thin film transistors of the plurality of first thin film transistors and one of the plurality of insulation layers;
- and
- a hydrogen adsorption layer positioned between two insulation layers of the plurality of insulation layers and disposed in a portion of a region overlapping the capacitor electrode.
A display device comprising:
- a display panel in which a plurality of gate lines, a plurality of data lines, and a plurality of subpixels are disposed;
- a plurality of driving transistors disposed in each of the plurality of subpixels;
- a plurality of switching transistors disposed in each of the plurality of subpixels;
- and
- a capacitor electrode including a hydrogen adsorption layer overlapping at least a portion of a gate electrode of one of the plurality of driving transistors and disposed on at least one of an upper surface and a lower surface of the capacitor electrode.
Dependencies are inferred from the claim text.