System and method for cigs thin film pretreatment

A system for CIGS thin film pretreatment, comprising a radio frequency (RF) power supply system, an inductance coil, a process chamber and a cathode plate, wherein,

• the inductance coil is disposed on a top of the process chamber;
• the cathode plate is disposed at a bottom of the process chamber;
• the RF power supply system is configured to power the inductance coil and the cathode plate at different power, to form a RF voltage, and make the inductance coil generate rays with a specified frequency;
• and
• the process chamber is configured to contain a CIGS thin film to be treated, contain a process gas, and allow the rays to enter, wherein
• the CIGS thin film is placed above the cathode plate, the process gas is capable of forming plasma under ionization of the rays, and the plasma is capable of moving toward the cathode plate and bombarding a surface of the CIGS thin film under driving of the RF voltage.