Ingan solar photovoltaic device with flexible multi-layer structure and method for manufacturing the same

Abstract

An InGaN solar photovoltaic device includes a base band, a light absorption layer, an n-type ZnO electron transport layer, and a p-type InN hole transport layer, the p-type InN hole transport layer is on a front side of the light absorption layer, and the base band and the n-type ZnO electron transport layer are on a back side of the light absorption layer, wherein the light absorption layer includes a p-type InxGa1-XN layer and an n-type InyGa1-yN layer which are superposed, where 0.2<x<0.4 and 0.2<y<0.4, and the p-type InxGa1-XN layer and the n-type InyGa1-yN layer are doped with Si and Mg. The InGaN solar photovoltaic device with a flexible multi-layer structure features high in energy conversion efficiency, low in cost, simple in manufacturing, and easy to implement, and thus has a broad prospect in application.

Dependencies are inferred from the claim text.