Ferroelectric capacitor and method of patterning such

A method for forming a ferroelectric capacitive device, the method comprising:

• depositing a first electrode comprising first conductive material;
• depositing a second electrode adjacent to the first electrode, wherein the second electrode comprises second conductive material;
• depositing ferroelectric material adjacent to the second electrode;
• depositing a third electrode adjacent to the ferroelectric material, wherein the third electrode comprises third conductive material;
• depositing a fourth electrode adjacent to the third electrode, wherein the fourth electrode comprises fourth conductive material;
• etching the first and second electrodes;
• conformably depositing a non-conductive dielectric over the etched first and second electrodes;
• forming a metal cap over a selective part of the non-conductive dielectric, wherein the metal cap conforms to portions of sidewalls of the non-conductive dielectric;
• and
• isotopically etching the metal cap and the non-conductive dielectric such that non-conductive dielectric remains on sidewalls of the first and second electrodes but not on the third and fourth electrodes.

A system comprising:

• a processor;
• a communication interface communicatively coupled to the processor;
• and
• a memory coupled to the processor, wherein the memory includes bit-cells, wherein one of the bit-cell includes:
• a transistor having a source, a drain, and a gate;
• a word-line coupled to the gate;
• a bit-line coupled to one of the source or drain of the transistor;
• and
• a capacitive structure coupled to one of the drain or source of the transistor, wherein the capacitive structure comprises:
• a first electrode comprising first conductive material, wherein the first electrode is coupled to the one of the drain or source of the transistor;
• a second electrode comprising second conductive material, the second electrode adjacent to the first electrode;
• a structure comprising ferroelectric material, the structure adjacent to the second electrode;
• a third electrode comprising third conductive material, the third electrode adjacent to the structure;
• a fourth electrode comprising fourth conductive material, the fourth electrode adjacent to the third electrode;
• and
• a dielectric adjacent to sidewalls of at least the first and second electrodes but not adjacent to the third electrode, and fourth electrode.