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US 2021/0202497 A1Published application
Semiconductor device structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTa-Chun LIN, Kuo-Hua PAN
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first device formed over a substrate, and the first device includes a first fin structure. The semiconductor device structure also includes a second device formed over or below the first device, and the second device includes a plurality of second nanostructures stacked in a vertical direction.
Claims20
A semiconductor device structure, comprising:
- a first device formed over a substrate, wherein the first device comprises a first fin structure;
- and
- a second device formed over or below the first device, wherein the second device comprises a plurality of second nanostructures stacked in a vertical direction.
A semiconductor device structure, comprising:
- a first device formed over a substrate, wherein the first device comprises a first fin structure;
- a first gate stack wrapped around the first fin structure;
- a second device formed over the first device, wherein the second device comprises a plurality of second nanostructures stacked in a vertical direction;
- and
- a second gate stack wrapped around the second nanostructures, wherein a topmost surface of the first gate stack is higher than a bottom surface of the second gate stack.
2 more elements
A semiconductor device structure, comprising:
- a plurality of first nanostructures formed over a substrate, wherein the first nanostructures are stacked in a vertical direction;
- a first gate stack wrapped around the first nanostructures;
- a first inner gate spacer formed over the first nanostructures;
- a second fin structure formed over the first inner gate spacer;
- and
- a second gate stack wrapped around the second fin structure.
3 more elements
Dependencies are inferred from the claim text.