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US 2021/0202398 A1Published application
System on Integrated Chips and Methods of Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Chuei-Tang Wang
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Abstract
A semiconductor device and methods of forming are provided. The device includes a second die bonded to a first die and a third die bonded to the first die. An isolation material extends along sidewalls of the second die and the third die. A through via extends from the first die into the isolation material. A first passive device disposed in the isolation material, the first passive device being electrically connected to the first die.
Claims20
A semiconductor device, comprising:
- a first die, the first die comprising a first electrical connector, a second electrical connector, and a third electrical connector;
- a second die bonded to the first die, wherein the first electrical connector of the first die directly contacts a first electrical connector of the second die;
- an isolation material extending along sidewalls of the second die and a surface of the first die;
- a through via extending into the isolation material from the second electrical connector of the first die;
- and
- a first passive device contacting the third electrical connector of the first die, the isolation material extending along sidewalls of the first passive device.
3 more elements
A semiconductor device, comprising:
- a first die;
- and
- a second die directly bonded to the first die, wherein a perimeter of the second die is within a perimeter of the first die in a plan view;
- a first passive device, wherein the first passive device directly contacts the first die and is disposed next to a first sidewall of the second die;
- and
- a second passive device, wherein the second passive device directly contacts the first die, and is disposed next to a second sidewall of the second die.
3 more elements
A semiconductor device, comprising:
- a plurality of second dies directly bonded to a first die;
- an isolation material on the first die, the isolation material extending along sidewalls of the plurality of second dies;
- a plurality of through vias extending from the first die into the isolation material, each through via of the plurality of through vias having a same thickness;
- and
- a plurality of passive devices disposed in the isolation material and contacting the first die, wherein a thickness of each passive device of the plurality of passive devices is the same as the thickness of each through via of the plurality of through vias.
2 more elements
Dependencies are inferred from the claim text.