Semiconductor packages

A semiconductor package comprising:

• a lower semiconductor package;
• an upper semiconductor package on the lower semiconductor package;
• and
• an inter-package connection member between the lower semiconductor package and the upper semiconductor package,
• wherein the lower semiconductor package comprises:
• a first connection structure;
• a first semiconductor chip on the first connection structure;
• a second connection structure on the first connection structure;
• and
• a third connection structure comprising a first conductive pattern layer on the first semiconductor chip, a first insulating layer on the first conductive pattern layer and the second connection structure, a second conductive pattern layer on the first insulating layer, a first via penetrating the first insulating layer, and a second insulating layer extending between a side surface of the first via and the first insulating layer,
• wherein a chemical composition of the first insulating layer differs from a chemical composition of the second insulating layer,
• wherein the upper semiconductor package includes a fourth connection structure and a second semiconductor chip on the fourth connection structure, and
• wherein the inter-package connection member is between the second conductive pattern layer of the third connection structure and the fourth connection structure.

A semiconductor package comprising:

• a semiconductor chip;
• an intermediate connection structure comprising an intermediate insulating layer on sides of the semiconductor chip and an intermediate via penetrating the intermediate insulating layer;
• a lower connection structure comprising a lower insulating layer on a lower surface of the semiconductor chip and on a lower surface of the intermediate connection structure and a lower conductive pattern layer on the lower insulating layer and connected to the semiconductor chip and the intermediate via;
• a sealing layer on an upper surface of the semiconductor chip and an upper surface of the intermediate connection structure;
• an upper connection structure including a first upper conductive pattern layer on the sealing layer, a first upper insulating layer on the first upper conductive pattern layer, a second upper insulating layer on the first upper insulating layer, a second upper conductive pattern layer on the second upper insulating layer, a first upper via penetrating the first upper insulating layer and the second upper insulating layer to connect between the second upper conductive pattern layer and the first upper conductive pattern layer, and a second upper via penetrating the sealing layer, the first upper insulating layer, and the second upper insulating layer to connect between the second upper conductive pattern layer and the intermediate via;
• and
• an external connection terminal on a lower surface of the lower connection structure and connected to the lower conductive pattern layer,
• wherein the first upper insulating layer comprises a composite material including a matrix and a filler in the matrix, and
• wherein the second upper insulating layer is free of the filler.