Back to results
US 2021/0202374 A1Published application
Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances
AssigneeIntel Corporation
InventorsHan Wui THEN, Sansaptak DASGUPTA, Marko RADOSAVLJEVIC, Sanaz K. GARDNER
Life of this patent
Estimating the term…
Abstract
Embodiments of the invention include a microelectronic device that includes a substrate, at least one dielectric layer on the substrate and a plurality of conductive lines within the at least one dielectric layer. The microelectronic device also includes an air gap structure that is located below two or more of the plurality of conductive lines.
Claims20
An interconnect structure comprising:
- at least one dielectric layer and a conductive layer having a plurality of conductive lines within the at least one dielectric layer;
- and
- at least one air gap structure that is integrated with the interconnect structure, the at least one air gap structure is positioned between adjacent conductive lines of the plurality of conductive lines, wherein the at least one air gap structure comprises a group III Nitride layer formed on a region of the at least one air gap structure.
A method of fabricating an interconnect structure, the comprising:
- forming at least one dielectric layer and a conductive layer having a plurality of conductive lines within the at least one dielectric layer;
- and
- forming at least one air gap structure that is integrated with the interconnect structure, the at least one air gap structure is positioned between adjacent conductive lines of the plurality of conductive lines, wherein the at least one air gap structure comprises a group III Nitride layer formed on a region of the at least one air gap structure.
A computing device, comprising:
- a board;
- and
- a component coupled to the board, the component including an integrated circuit structure, comprising:
- at least one dielectric layer and a conductive layer having a plurality of conductive lines within the at least one dielectric layer;
- and
- at least one air gap structure that is integrated with the interconnect structure, the at least one air gap structure is positioned between adjacent conductive lines of the plurality of conductive lines, wherein the at least one air gap structure comprises a group III Nitride layer formed on a region of the at least one air gap structure.
3 more elements
Dependencies are inferred from the claim text.