Semiconductor device and manufacturing method thereof

A method for manufacturing a semiconductor device, comprising the steps of:

• (a) forming a metal wiring layer having a plurality of engaging structures on an insulating thermal substrate, wherein each of the plurality of engaging structures is protruded from the insulating thermal substrate;
• (b) forming solder structures on a heat-dissipation component, wherein the solder structures have a plurality of protrusive columns;
• (c) aligning the plurality of engaging structures of the metal wiring layer with the plurality of corresponding protrusive columns of the solder structures, wherein an interval exists between any two neighboring of the plurality of protrusive columns and corresponding one of the plurality of engaging structures;
• and
• (d) hot pressing the insulating thermal substrate and the heat-dissipation component to have the solder structures to wrap partly the plurality of engaging structures, so that the heat-dissipation component engages the metal wiring layer, wherein, after the hot pressing, each of the plurality of protrusive columns deforms sideward into the interval.