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US 2021/0202309 A1Published application
Electrical Connection for Semiconductor Devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Chiang Tsai, Jyh-Huei Chen
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Abstract
In one example, a method includes performing a first etching process to pattern a dielectric layer and expose a contact etch stop layer, performing a second etching process to remove the etch stop layer and expose a top surface of an underlying feature, performing a third etching process to laterally recess the etch stop layer, and depositing a conductive material over the underlying feature to create a conductive feature in direct contact with the underlying feature.
Claims20
A method comprising:
- forming a first conductive feature within a dielectric layer;
- selectively etching back the conductive feature;
- forming an etch stop layer on the first conductive feature and the dielectric layer;
- patterning the etch stop layer to expose a top surface of the first conductive feature;
- laterally etching the etch stop layer below the top surface of the dielectric layer to expose the entire top surface of the first conductive feature;
- and
- depositing a conductive material over the first conductive feature to form a second conductive feature.
4 more elements
A method comprising:
- etching back an underlying feature within a first dielectric layer;
- performing a first etching process to pattern a second dielectric layer and expose a contact etch stop layer;
- performing a second etching process to remove the etch stop layer below the top surface of the first dielectric layer;
- performing a third etching process to laterally recess the etch stop layer;
- and
- depositing a conductive material over the underlying feature to create a conductive feature in direct contact with the underlying feature.
3 more elements
A semiconductor device comprising:
- a first conductive feature embedded in a first dielectric layer such that a top surface of the first dielectric layer is higher than a top surface of first conductive feature;
- a contact etch stop layer (CESL) disposed on the first dielectric layer;
- a second conductive feature extending through the CESL and being in direct contact with the first conductive feature, the second conductive feature converging to a narrow point from above and below, the narrow point being lower than a top surface of the etch-stop layer.
Dependencies are inferred from the claim text.