Semiconductor processing apparatus and method utilizing electrostatic discharge (esd) prevention layer

A semiconductor processing apparatus, comprising:

• a load/unload port configured to receive a Front Opening Unified Pod (FOUP) carrying a semiconductor wafer;
• a first robotic wafer handling structure configured to transport the semiconductor wafer within the semiconductor processing apparatus;
• a process chamber including a first wafer stage configured to support the semiconductor wafer;
• and
• at least one electrostatic discharge (ESD) prevention layer including a homogenous mixture of a first material and a second material, the second material having an electrical conductivity that is greater than an electrical conductivity of the first material,
• wherein the at least one ESD prevention layer is provided on at least one of:
• the FOUP, the load/unload port, the first robotic wafer handling structure, or the first wafer stage.

A method, comprising:

• receiving, by a load port of a semiconductor processing apparatus, a semiconductor wafer in a Front Opening Unified Pod (FOUP);
• transferring, by a first robotic wafer handling structure, the semiconductor wafer to a first process chamber of the semiconductor processing apparatus;
• processing the semiconductor wafer in the first process chamber, the first process chamber including a first wafer stage configured to support the semiconductor wafer;
• and
• prior to returning the semiconductor wafer to the FOUP, contacting, by the semiconductor wafer, at least one electrostatic discharge (ESD) prevention layer including a first material and a second material, the second material having an electrical conductivity that is greater than an electrical conductivity of the first material, the at least one ESD prevention layer being disposed on at least one of the FOUP, the first robotic wafer handling structure, or the first wafer stage,
• wherein the first material includes at least one of a polymer or a resin material.