Thermally conductive structure for heat dissipation in semiconductor packages

A semiconductor package, comprising:

• a wafer;
• a first chip and a second chip attached to an upper surface of the wafer, wherein an upper surface of the first chip is arranged at a first height measured perpendicularly from the upper surface of the wafer, wherein an upper surface of the second chip is arranged at a second height measured perpendicularly from the upper surface of the wafer, and wherein the first height is different than the second height;
• an insulating barrier layer arranged over the wafer, above the upper surface of the first chip, along outer sidewalls of the first chip, above the upper surface of the second chip, and along sidewalls of the second chip;
• a thermally conductive layer arranged over the insulating barrier layer;
• and
• a heat sink arranged over the thermally conductive layer.

A semiconductor package, comprising:

• a wafer having an adhesive layer on an upper surface of the wafer;
• at least one chip attached on first portions of an upper surface of the adhesive layer;
• an insulating barrier layer arranged over the at least one chip and directly on a second portion of the upper surface of the adhesive layer;
• a thermally conductive layer arranged over the insulating barrier layer, arranged over the at least one chip, and having a substantially planar upper surface;
• and
• a heat sink arranged over the thermally conductive layer.