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US 2021/0202260 A1Published application
Etching method, substrate processing apparatus, and substrate processing system
AssigneeTokyo Electron Limited
InventorsShinya ISHIKAWA, Kenta ONO, Masanobu HONDA
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Abstract
A technique enables etching of a film on a substrate with reduced etching on the surface of a side wall. An etching method includes forming a protective layer on a surface of aside wall defining a recess in a substrate. The protective layer contains sulfur atoms. The etching method further includes etching a film on the substrate to increase a depth of the recess after forming the protective layer.
Claims19
An etching method, comprising:
- forming a protective layer on a surface of a side wall defining a recess in a substrate, the protective layer containing sulfur atoms;
- and
- etching a film on the substrate to increase a depth of the recess after forming the protective layer.
A substrate processing apparatus, comprising:
- a chamber;
- a substrate support configured to support a substrate in the chamber;
- a gas supply unit configured to supply a gas into the chamber;
- and
- a controller configured to control the gas supply unit,
- wherein the controller controls the gas supply unit to supply one or more gases into the chamber to form a protective layer containing sulfur atoms on a surface of a side wall defining a recess in the substrate supported on the substrate support, and
- controls the gas supply unit to supply a process gas to etch a film on the substrate to increase a depth of the recess after the protective layer is formed.
4 more elements
A substrate processing system, comprising:
- a film deposition apparatus configured to form a protective layer containing sulfur atoms on a surface of a side wall defining a recess in a substrate;
- and
- a substrate processing apparatus configured to etch a film on the substrate to increase a depth of the recess after the protective layer is formed.
Dependencies are inferred from the claim text.