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US 2021/0202256 A1Published application
Silicide Films Through Selective Deposition
AssigneeApplied Materials, Inc.
InventorsSwaminathan Srinivasan, Abhijit Basu Mallick, Nicolas Breil
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Abstract
Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.
Claims20
A selective deposition method comprising:
- exposing a substrate comprising a first semiconductor surface and the second dielectric surface to a blocking compound to selectively form a blocking layer on the second dielectric surface;
- selectively depositing a metal layer on the first surface over the second surface;
- optionally depositing a germanium-containing layer on the first surface;
- optionally depositing a silicon-containing layer on the first surface;
- and
- annealing the substrate to form a modified first surface.
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A selective deposition method comprising:
- exposing a substrate comprising a first semiconductor surface and the second dielectric surface to a blocking compound to selectively form a blocking layer on the second dielectric surface;
- selectively depositing a metal layer on the first surface over the second surface;
- depositing a germanium-containing layer on the first surface;
- depositing a silicon-containing layer on the first surface;
- and
- annealing the substrate to form a modified first surface comprising a metal SiGe material.
3 more elements
Dependencies are inferred from the claim text.