Semiconductor structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHIA-CHUNG CHEN, CHUNG-HAO CHU, CHI-FENG HUANG, VICTOR CHIANG LIANG
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Abstract
A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantations in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.
Claims20
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate;
- forming a fin structure over the substrate;
- depositing an insulation material over the fin structure;
- performing a plurality of ion implantations in-situ with implantation energies increased or decreased stepwise;
- and
- removing at least a portion of the insulation material to expose a portion of the fin structure.
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate;
- forming a fin structure over the substrate;
- depositing an insulation material over the fin structure;
- forming a sacrificial layer over the fin structure and the insulation material;
- performing a plurality of ion implantations in-situ;
- and
- removing at least a portion of the insulation material to expose a portion of the fin structure.
A semiconductor structure, comprising:
- a substrate;
- a fin structure formed over the substrate and having a top and sidewalls;
- and
- an insulation material deposited over the substrate and surrounding at least portions of the fin structure;
- wherein the semiconductor structure has linearity in capacitance lower than approximately 5%.
Dependencies are inferred from the claim text.