Plasma generating device, substrate processing apparatus, and method of manufacturing semiconductor device

A substrate processing apparatus, comprising:

• a process chamber in which a substrate is processed;
• a first gas supply system configured to supply a first gas into the process chamber;
• a second gas supply system configured to supply a second gas into the process chamber;
• a plasma generator configured to activate the second gas by converting the second gas into plasma;
• and
• an exhaust system configured to evacuate an interior of the process chamber,
• wherein the plasma generator includes:
• one or more first electrodes connected to a high-frequency power supply;
• one or more second electrodes that are grounded;
• and
• one or more buffer structures configured to form one or more buffer chambers that accommodate the one or more first electrodes and the one or more second electrodes,
• wherein the one or more first electrodes and the one or more second electrodes are alternately arranged such that a total number of the one or more first electrodes and the one or more second electrodes are in an odd number of three or more,
• wherein an electrode among one of the one or more first electrodes and the one or more second electrodes is used in common for two adjacent electrodes among the other one of the one or more first electrodes and the one or more second electrodes, and
• wherein a gas supply port that supplies the second gas into the process chamber is installed on a wall surface of one of the buffer structures.

A method of manufacturing a semiconductor device, comprising:

• accommodating a substrate in a process chamber;
• supplying a first gas to the substrate;
• converting a second gas into plasma by a plasma generator including one or more first electrodes connected to a high-frequency power supply, one or more second electrodes that are grounded, and a buffer structure configured to form a buffer chamber that accommodates the one or more first electrodes and the one or more second electrodes, the one or more first electrodes and the one or more second electrodes being alternately arranged such that a total number of the one or more first electrodes and the one or more second electrodes are in an odd number of three or more, and an electrode among one of the one or more first electrodes and the one or more second electrodes being used in common for two adjacent electrodes among the other one of the one or more first electrodes and the one or more second electrodes;
• and
• supplying the second gas to the substrate from a gas supply port installed on a wall surface of the buffer structure by activating the second gas by converting the second gas into plasma.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:

• accommodating a substrate in a process chamber of the substrate processing apparatus;
• supplying a first gas to the substrate;
• converting a second gas into plasma by a plasma generator including one or more first electrodes connected to a high-frequency power supply, one or more second electrodes that are grounded, and a buffer structure configured to form a buffer chamber that accommodates the one or more first electrodes and the one or more second electrodes, the one or more first electrodes and the one or more second electrodes being alternately arranged such that a total number of the one or more first electrodes and the one or more second electrodes are in an odd number of three or more, and an electrode among one of the one or more first electrodes and the one or more second electrodes being used in common for two adjacent electrodes among the other one of the one or more first electrodes and the one or more second electrodes;
• and
• supplying the second gas to the substrate from a gas supply port installed on a wall surface of the buffer structure by activating the second gas by converting the second gas into plasma.