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US 2021/0199427 A1Published application
Thick photo resist layer metrology target
AssigneeKLA Corporation
InventorsGuo Lingyi, Jincheng Pei
Life of this patent
Estimating the term…
Abstract
A metrology target includes a first target structure formed within at least one of a first area and a third area of a first layer of a sample, where the first target structure comprises a plurality of first cells containing one or more first cell pattern elements; and a second target structure formed within at least one of a second area and a fourth area of a second layer of the sample, the second target structure comprising a plurality of second cells containing one or more second cell pattern elements.
Claims30
A photoresist metrology target comprising:
- a first target structure formed from a photoresist material, wherein the first target structure is formed within at least one of a first area and a third area of a first layer of a sample, the first target structure comprising a plurality of first cells containing one or more first cell pattern elements;
- and
- a second target structure formed from a photoresist material, wherein the second target structure is formed within at least one of a second area and a fourth area of a second layer of the sample, the second target structure comprising a plurality of second cells containing one or more second cell pattern elements.
A system comprising:
- a controller communicatively couplable to one or more metrology sub-systems, wherein the controller including one or more processors, wherein the one or more processors are configured to execute a set of program instructions maintained in memory, wherein the set of program instructions is configured to cause the one or more processors to:
- receive, from the one or more metrology sub-systems, one or more signals indicative of illumination emanating from one or more metrology targets of a sample, wherein the one or more metrology targets of the sample comprise:
- a first target structure formed from a photoresist material, wherein the first target structure is formed within at least one of a first area and a third area of a first layer of a sample, the first target structure comprising a plurality of first cells containing one or more first cell pattern elements;
- and a second target structure formed from a photoresist material, wherein the second target structure is formed within at least one of a second area and a fourth area of a second layer of the sample, the second target structure comprising a plurality of second cells containing one or more second cell pattern elements;
- generate one or more first overlay measurements based on one or more signals indicative of illumination emanating from one or more portions of the first target structure;
- generate one or more second overlay measurements based on one or more signals indicative of illumination emanating from one or more portions of the second target structure;
- and
- determine an overlay value of the sample based on the one or more first overlay measurements and the one or more second overlay measurements.
5 more elements
A method of measuring overlay of a sample, comprising:
- illuminating a sample including one or more metrology targets, the one or more metrology targets comprising:
- a first target structure formed from a photoresist material, wherein the first target structure is formed within at least one of a first area and a third area of a first layer of a sample, the first target structure comprising a plurality of first cells containing one or more first cell pattern elements;
- and a second target structure formed from a photoresist material, wherein the second target structure is formed within at least one of a second area and a fourth area of a second layer of the sample, the second target structure comprising a plurality of second cells containing one or more second cell pattern elements;
- detecting illumination emanating from the one or more metrology targets of the sample;
- generating one or more first overlay measurements based on one or more signals indicative of illumination emanating from one or more portions of the first target structure;
- generating one or more second overlay measurements based on one or more signals indicative of illumination emanating from one or more portions of the second target structure;
- and
- determining an overlay value of the sample based on the one or more first overlay measurements and the one or more second overlay measurements.
5 more elements
A method of forming a metrology target comprising:
- forming a first target structure from a photoresist material, wherein the first target structure is formed within at least one of a first area and a third area of a first layer of a sample, the first target structure comprising a plurality of first cells containing one or more first cell pattern elements;
- and
- forming a second target structure from a photoresist material, wherein the second target structure is formed within at least one of a second area and a fourth area of a second layer of the sample, the second target structure comprising a plurality of second cells containing one or more second cell pattern elements.
Dependencies are inferred from the claim text.