Back to results
US 2021/0198798 A1Published application
Immersion plating treatments for indium passivation
AssigneeTexas Instruments Incorporated
InventorsSimon Joshua Jacobs, Kathryn Anne Schuck
Life of this patent
Estimating the term…
Abstract
A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.
Claims21
A bonding structure formed on a substrate, the bonding structure comprising:
- an indium layer;
- and
- a passivating nickel plating formed on the indium layer;
- wherein the nickel plating serves to prevent a reaction involving the indium layer.
1 more element
A method of preventing a reaction involving an indium layer, the method comprising:
- forming a bonding structure on a substrate where indium from an indium layer is exposed;
- and
- forming a passivating nickel-plating on the indium layer by immersion plating;
- wherein the nickel plating serves to prevent a reaction involving the indium layer.
1 more element
A method of fabricating a microelectronic device package, the method comprising:
- forming an indium layer;
- immersing the indium layer within an acidic medium containing nickel cations to form nickel plating on the indium layer;
- and
- positioning the nickel-plated indium layer within, adjacent to, or surrounding a perimeter of a cavity to be formed on a wafer;
- wherein the nickel plating serves to prevent a reaction between the indium layer and other materials within the cavity.
2 more elements
Dependencies are inferred from the claim text.