Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

A method for manufacturing an integrated circuit device, an optical device, a micromachine and/or a mechanical precision device, the method comprising:

• (1) providing a substrate comprising a patterned material layer having line-space dimensions of 50 nm or less, an aspect ratio of 4 or more, or a combination thereof;
• (2) contacting the substrate at least once with a rinsing composition;
• and
• (3) removing the rinsing composition from the contact with the substrate,
• wherein the rinsing composition comprises a C1 to C6 alkanol and a carboxylic acid ester of the following formula I
• wherein
• R1 and R2 are each independently selected from the group consisting of a C1 to C6 alkyl, which may be unsubstituted or substituted by OH or F, and —X21—[O—X22]n—H;
• wherein
• X21 and X22 are each independently a C1 to C6 alkandiyl, which may be unsubstituted or substituted by OH or F;
• and
• n is an integer of 1 to 5.