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US 2021/0198571 A1Published application
Methods and devices for growing scintillation crystals with short decay time
AssigneeMeishan Boya Advanced Materials Co., Ltd.
InventorsYu WANG, Weiming GUAN, Min LI
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Abstract
The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.
Claims20
A crystal, a formula of the crystal being X2x:M2m:Lu2(1−x−m−z)Y2zSiQ(5−n/2)Nn, wherein:
- X consists of at least one of Ce, Cl, F, Br, N, P, or S;
- M consists of at least one of Ca, Mg, Sr, Mn, Ba, Al, Fe, Re, La, Ce, Rr, Nd, Pm, Sm, Eu, Gd, Td, Dy, Ho, Er, Yb, Tm, Lu, Sc, or Y;
- Q consists of at least one of O, Cl, F, Br, or S;
- N consists of at least one of Cl, F, Br, or S;
- and
- x=0.000001-0.06, m=0-0.006, z=0-1, and n=0-5.
3 more elements
Dependencies are inferred from the claim text.