CUREABLE FORMULATIONS FOR FORMING LOW-k DIELECTRIC SILICON-CONTAINING FILMS USING POLYCARBOSILAZANE

A reaction mixture for producing a film forming polycarbosilazane polymer or oligomer, the reaction mixture comprising carbosilanes and amines,

• wherein the carbosilanes contain at least two —SiH2— moieties, either as terminal groups (—SiH2R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1 to C6 linear, branched, or cyclic alkyl- group, a C1 to C6 linear, branched, or cyclic alkenyl- group, or combination thereof, and
• wherein the reaction mixture is capable of forming the film forming polycarbosilazane polymer or oligomer.

The method of 31, wherein the step of the producing the film forming polycarbosilazane polymer or oligomer comprises the step of adding a catalyst to the reaction mixture, wherein the film forming polycarbosilazane polymer or oligomer is produced by a polymerization of the reaction mixture through a catalytic dehydrocoupling (DHC) reaction.

The method of 31, wherein the step of the producing the film forming polycarbosilazane polymer or oligomer comprises the step of adding a polysilane that contains more than two —SiH2R function groups to the reaction mixture for enhancing the polymerization of the carbosilanes with amines, wherein R is H, a C1 to C6 linear, branched, or cyclic alkyl- group, a C1 to C6 linear, branched, or cyclic alkenyl- group, or a combination thereof.

The method of 39, wherein the polysilane is selected from one or more of neopentasilane (or 2,2-disilyltrisilane) (Si(SiH3)4), n-tetrasilane (SiH3(SiH2)2SiH3), 2-silyl-tetrasilane ((SiH3)2(SiH2)2SiH3), trisilylamine (N(SiH3)3), or trisilyamine derivatives such as alkylamino-substituted trisilylamines or oligomers of trisilylamines.

A silicon and carbon containing film forming composition comprising:

• a film forming polycarbosilazane polymer or oligomer that has a backbone comprising —Si—N— units, —Si—N—Cn—N—Si— units, —Si—N—Si— units or combinations thereof, wherein n≥1,
• wherein the backbone includes cross-linked —Si—N— units, —Si—N—Cn—N—Si-units or —Si—N—Si— units, branched —Si—N— units, —Si—N—Cn—N—Si— units or —Si—N—Si-units, or combinations thereof.