Gas distribution ceramic heater for deposition chamber

A substrate processing apparatus, comprising:

• a lid heater having a ceramic heater body having a first side opposite a second side, wherein the ceramic heater body includes a first plurality of gas channels extending from one or more first gas inlets on the first side to a plurality of first gas outlets on the second side, wherein the first plurality of gas channels includes a first passageway extending substantially vertically from each of the one or more first gas inlets towards the second side, a plurality of second passageways extending radially outward from each first passageway, and a plurality of third passageways extending from each of the plurality of second passageways towards the plurality of first gas outlets;
• an RF electrode embedded in the ceramic heater body proximate the second side, wherein the first plurality of gas channels extend through the RF electrode;
• and
• a heating element embedded in the ceramic heater body.

A deposition chamber, comprising:

• a process chamber having a chamber lid and defining a processing volume therein;
• a support pedestal disposed in the processing volume to support a substrate;
• a lid heater coupled to the chamber lid, wherein the lid heater includes a ceramic heater body having a first side opposite a second side and a heating element embedded therein, wherein the lid heater includes a first plurality of gas channels extending from one or more first gas inlets on the first side, wherein each of the one or more first gas inlets extend to a plurality of first gas outlets on the second side;
• and
• an RF electrode embedded in the ceramic heater body proximate the second side, wherein the first plurality of gas channels extend through the RF electrode.