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US 2021/0175685 A1Published application
Semiconductor Optical Element
AssigneeNippon Telegraph and Telephone Corporation
InventorsTakuma AIHARA, Shinji MATSUO, Tai TSUCHIZAWA, Takaaki KAKITSUKA, Tatsurou HIRAKI
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Abstract
A wavelength tunable laser formed on a substrate made of single-crystal silicon is provided. The wavelength tunable laser includes a light emitting portion made of a III-V compound semiconductor, and external resonators provided with an optical filter. Cores included in the external resonators are made of one of SiN, SiON, and SiOn (n is smaller than 2).
Claims17
-8. (canceled)
A semiconductor optical element comprising:
- a wavelength tunable laser on a silicon substrate, wherein the wavelength tunable laser includes:
- a light emitting portion made of a III-V compound semiconductor;
- and
- an external resonator comprising an optical filter and an optical waveguide, wherein the optical waveguide comprises:
- a lower cladding layer on the silicon substrate, wherein the lower cladding layer comprises an oxide;
- a core on the lower cladding layer, wherein the core comprises SiN, SiON, or SiOn, and wherein n is smaller than 2;
- and
- an upper cladding layer covering the core, wherein the upper cladding layer comprises an oxide, and wherein the light emitting portion and the external resonator are optically connected via a spot-size converter.
5 more elements
A method for forming a semiconductor optical element, the method comprising:
- forming a wavelength tunable laser on a silicon substrate, wherein forming the wavelength tunable laser includes:
- providing a light emitting portion made of a III-V compound semiconductor;
- and
- connecting the light emitting portion to an external resonator via a spot-size converter, wherein an external resonator comprises an optical filter and an optical waveguide, and wherein the optical waveguide comprises:
- a lower cladding layer on the silicon substrate, wherein the lower cladding layer comprises an oxide;
- a core on the lower cladding layer, wherein the core comprises SiN, SiON, or SiOn, and wherein n is smaller than 2;
- and
- an upper cladding layer covering the core, wherein the upper cladding layer comprises an oxide.
5 more elements
Dependencies are inferred from the claim text.