Electro-absorption modulator, optical semiconductor device and optical module
AssigneeMitsubishi Electric Corporation
InventorsShinya OKUDA, Takashi NAGIRA
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Abstract
An electro-absorption modulator of the invention is an electro-absorption modulator which is formed on an InP substrate and modulate incident light according to a voltage applied to that modulator, and which comprises a light absorbing layer for absorbing a portion of the incident light by using an electric field generated by the applied voltage; wherein the light absorbing layer is comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi.
Claims20
An electro-absorption modulator which is formed on an InP substrate and modulates incident light according to a voltage applied to that modulator,
- said electro-absorption modulator comprising:
- a light absorbing layer for absorbing a portion of the incident light by using an electric field generated by the applied voltage;
- wherein the light absorbing layer is comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi.
An electro-absorption modulator which is formed on an InP substrate and modulates incident light according to a voltage applied to that modulator, said electro-absorption modulator comprising:
- a light absorbing layer for absorbing a portion of the incident light by using an electric field generated by the applied voltage;
- wherein the light absorbing layer has a multiple quantum-well structure in which quantum-well layers and barrier layers are stacked alternately;
- wherein the quantum-well layers are each comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi;
- and wherein the barrier layers are each comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Bi but contains Al.
Dependencies are inferred from the claim text.