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US 2021/0175451 A1Published application
Pb-free perovskite materials for short wave ir devices
AssigneesHonda Motor Co., Ltd., Utah State University
InventorsGugang CHEN, Yi RAO, Xia LI
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Abstract
The present disclosure is directed to methods of making Pb-free perovskites for short-wave IR (SWIR) devices and to various Pb-free perovskite materials disclosed herein. The perovskites disclosed herein have improved chemical stability and long-term stability, while the production methods disclosed herein have improved safety and lower cost.
Claims24
A Pb-free perovskite material having the general formula A3+B+C+XYZ3 wherein:
- A3+Z3 is a first compound comprising:
- A3+, a first trivalent metal cation, and Z3, three first monovalent anions;
- B+Y is a second compound comprising:
- B+, a second monovalent metal cation, and Y, a second monovalent anion;
- and
- C+X is a third compound comprising:
- C+, a third monovalent metal cation, and X, a third monovalent anion,
- wherein the molar ratio of the first compound :
- second compound :
- third compound is about 1:1:2.
7 more elements
A method of making a Pb-free perovskite material having the general formula A3+B+C+XYZ3, comprising:
- preparing a precursor solution in a solvent by:
- dissolving a first compound, comprising:
- A3+, a first trivalent metal cation, and Z3, three first monovalent anions, in the solvent;
- dissolving a second compound, comprising:
- B+, a second monovalent metal cation, and Y, a second monovalent anion, in the solvent;
- dissolving a third compound, comprising:
- C+, a third monovalent metal cation, and X, a third monovalent anion, in the solvent,
- wherein the molar ratio of the first compound:second compound:third compound is about 1:1:2, in the solvent;
- dispersing the precursor solution on a substrate;
- and
- annealing the dispersed precursor solution on the substrate at an annealing temperature from 40-300° C., to form a Pb-free perovskite material.
8 more elements
Dependencies are inferred from the claim text.