Magnetic storage device
AssigneeToshiba Memory Corporation
InventorsDaisuke WATANABE, Toshihiko NAGASE
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Abstract
A magnetic storage device includes a magnetoresistive effect element. The magnetoresistive effect element includes a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; and a first layer provided at a side of the first ferromagnetic layer opposite to a side of the first ferromagnetic layer at which the non-magnetic layer is provided. The first layer includes a rare-earth element and the first layer has a region including boron (B) at a proportion higher than a proportion of boron (B) in the first ferromagnetic layer.
Claims20
A magnetic storage device comprising:
- a magnetoresistive effect element;
- the magnetoresistive effect element including:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer;
- and
- a first layer provided at a side of the first ferromagnetic layer opposite to a side of the first ferromagnetic layer at which the non-magnetic layer is provided,
- wherein:
- the first layer includes a rare-earth element;
- and
- the first layer has a region including boron (B) at a proportion higher than a proportion of boron (B) in the first ferromagnetic layer.
A magnetic storage device comprising:
- a magnetoresistive effect element;
- the magnetoresistive effect element including:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer;
- and
- a first layer provided at a side of the first ferromagnetic layer opposite to a side of the first ferromagnetic layer at which the non-magnetic layer is provided,
- wherein:
- the first layer includes a rare-earth element;
- the first layer has a region indicating a first strength corresponding to boron (B) higher than a second strength corresponding to boron (B) indicated in the first ferromagnetic layer;
- and
- the first strength and the second strength are based on electron energy loss spectroscopy (EELS).
Dependencies are inferred from the claim text.