C-shaped active area semiconductor device, method of manufacturing the same and electronic device including the same

A method of manufacturing a semiconductor device, comprising:

• providing a stack of a first material layer, a second material layer and a third material layer on a substrate;
• patterning the stack into a strip shape extending in a first direction;
• forming a first active layer on a sidewall of the stack patterned into the strip shape;
• forming a first isolation layer on the substrate, and a bottom surface of the first isolation layer being lower than a bottom surface of the second material layer;
• on the first isolation layer, forming a back gate stack covering at least an extension range of the second material layer in a vertical direction on a sidewall of the first active layer;
• forming a strip-shaped opening extending in the first direction in the stack patterned into the strip shape, thereby dividing the stack into two parts on opposite sides of the opening;
• replacing the second material layer with a dummy gate through the opening;
• forming source/drain portions in the first material layer and the third material layer;
• removing the dummy gate through the opening;
• and
• forming a gate stack, the gate stack comprising a portion embedded in a space left due to the removal of the dummy gate.