Back to results
US 2021/0175362 A1Published application
Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKosei NODA
Life of this patent
Estimating the term…
Abstract
A semiconductor device with stable electrical characteristics is provided. Alternatively, a semiconductor device having normally-off electrical characteristics is provided. A semiconductor device includes a gate electrode, a gate insulator, and an oxide semiconductor, the oxide semiconductor contains fluorine in a channel formation region, and a fluorine concentration in the channel formation region is higher than or equal to 1×1020 atoms/cm3 and lower than or equal to 1×1022 atoms/cm3. Note that fluorine is added by an ion implantation method.
Claims6
A display device comprising a pixel,
- wherein the pixel comprises:
- a transistor;
- a capacitor;
- a light-emitting element comprising a light-emitting layer;
- a partition wall over the capacitor;
- and
- a first insulator,
- wherein the capacitor comprises:
- a first conductor over a substrate;
- a second insulator over the first conductor;
- a third insulator over the second insulator;
- a second conductor over and in contact with the third insulator,
- a fourth insulator over the second conductor;
- and
- a third conductor over the fourth insulator,
- wherein at least one of the first conductor and the third conductor is configured to be one electrode of the capacitor, and the second conductor is configured to be the other electrode of the capacitor,
- wherein the transistor comprises an oxide semiconductor over and in contact with the third insulator,
- wherein the light-emitting layer is over the partition wall,
- wherein the first insulator is over the fourth insulator and below the third conductor,
- wherein the capacitor comprises a region where the first insulator is not provided, and
- wherein the third conductor in the region comprises a portion overlapping with the first conductor with the second conductor therebetween.
18 more elements
A display device comprising a pixel,
- wherein the pixel comprises:
- a transistor;
- a capacitor;
- a light-emitting element comprising a light-emitting layer;
- a partition wall over the capacitor;
- and
- a first insulator,
- wherein the capacitor comprises:
- a first conductor over a substrate;
- a second insulator over the first conductor;
- a third insulator over the second insulator;
- a second conductor over and in contact with the third insulator,
- a fourth insulator over the second conductor;
- and
- a third conductor over the fourth insulator,
- wherein at least one of the first conductor and the third conductor is configured to be one electrode of the capacitor, and the second conductor is configured to be the other electrode of the capacitor,
- wherein the transistor comprises an oxide semiconductor over and in contact with the third insulator,
- wherein the light-emitting layer is over the partition wall,
- wherein the first insulator is over the fourth insulator and below the third conductor, and
- wherein the first insulator is partly removed in a region where the first conductor, the second conductor, and the third conductor overlap with each other.
17 more elements
A display device comprising a pixel,
- wherein the pixel comprises:
- a transistor;
- a capacitor;
- a light-emitting element comprising a light-emitting layer;
- a partition wall over the capacitor;
- and
- a first insulator,
- wherein the capacitor comprises:
- a first conductor over a substrate;
- a second insulator over the first conductor;
- a third insulator over the second insulator;
- a second conductor over and in contact with the third insulator,
- a fourth insulator over the second conductor;
- and
- a third conductor over the fourth insulator,
- wherein at least one of the first conductor and the third conductor is configured to be one electrode of the capacitor, and the second conductor is configured to be the other electrode of the capacitor,
- wherein the transistor comprises an oxide semiconductor over and in contact with the third insulator,
- wherein the light-emitting layer is over the partition wall,
- wherein the first insulator is over the fourth insulator and below the third conductor,
- wherein the third conductor comprises a first region in contact with a top surface of the first insulator and a second region in contact with a top surface of the fourth insulator, and
- wherein in the second region, the first conductor and the second conductor overlap with each other.
18 more elements
Dependencies are inferred from the claim text.