Semiconductor device with u-shaped channel and manufacturing method thereof, and electronic apparatus including the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorHuilong ZHU
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Abstract
A semiconductor device with a U-shaped channel and a manufacturing method thereof and an electronic apparatus including the semiconductor device are disclosed. According to embodiments, the semiconductor device may include: a channel portion extending vertically on a substrate and having a U-shape in a plan view; source/drain portions located at upper and lower ends of the channel portion and along the U-shaped channel portion; and a gate stack overlapping the channel portion on an inner side of the U shape.
Claims37
A semiconductor device, comprising:
- a channel portion extending vertically on a substrate and having a U-shape in a plan view;
- source/drain portions located at upper and lower ends of the channel portion and along the U-shaped channel portion;
- and
- a gate stack overlapping the channel portion on an inner side of the U shape.
A method of manufacturing a semiconductor device, the method comprising:
- patterning a stack of a first material layer, a second material layer and a third material layer on a substrate, into a bar shape extending along a first direction;
- forming a first active layer on a sidewall of the stack patterned in the bar shape;
- forming a bar-shaped opening extending in a first direction in the stack patterned in the bar shape, so that the stack is annular;
- replacing the second material layer with a dummy gate through the opening;
- forming source/drain portions on upper and lower sides of the dummy gate;
- removing the dummy gate through the opening;
- and
- forming a gate stack in the opening, an outer edge of the gate stack being embedded in a space left due to the removal of the dummy gate.
Dependencies are inferred from the claim text.