Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsDONGHWAN HAN, SEUNGCHAN YUN
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate including an active region that extends in a first direction; a gate structure that intersects the active region and that extends in a second direction; a source/drain region on the active region on at least one side of the gate structure; a contact plug on the source/drain region on the at least one side of the gate structure; and a contact insulating layer on sidewalls of the contact plug, wherein a lower end of the contact plug is closer to the substrate than a lower end of the source/drain region.
Claims24
A semiconductor device comprising:
- a substrate including an active region that extends in a first direction;
- a gate structure that intersects the active region and that extends in a second direction;
- a source/drain region on the active region on at least one side of the gate structure;
- a contact plug on the source/drain region on the at least one side of the gate structure;
- and
- a contact insulating layer on sidewalls of the contact plug,
- wherein a lower end of the contact plug is located closer to the substrate than a lower end of the source/drain region.
(canceled)
A semiconductor device comprising:
- a substrate having a first region and a second region, and including active regions that extend in a first direction;
- gate structures respectively on the first and second regions that intersect the active regions, and that extend in a second direction;
- source/drain regions on the active regions on at least one sides of the gate structures and including metal-semiconductor layers in upper ends;
- contact plugs on the at least one sides of the gate structures, having portions of outer surfaces in contact with the source/drain regions, and having lower ends located closer to the substrate than lower ends of the source/drain regions;
- and
- contact insulating layers on sidewalls of the contact plugs,
- wherein each of the gate structures includes a gate insulating layer and a gate electrode layer stacked sequentially on the substrate, and gate spacer layers on sidewalls of the gate electrode layer in the first direction,
- wherein a first distance between the gate electrode layer and each of the contact plugs adjacent to the gate electrode layer in the first region is shorter than a second distance between the gate electrode layer and each of the contact plugs adjacent to the gate electrode layer in the second region.
(canceled)
(canceled)
A semiconductor device comprising:
- a substrate including active regions that extend in a first direction;
- gate structures including gate electrode layers that intersect the active regions and that extend in a second direction;
- source/drain regions on the active regions on at least one sides of the gate structures;
- contact plugs on the source/drain regions on the at least one sides of the gate structures;
- contact insulating layers that contact the gate structures and that surround sidewalls of the contact plugs;
- and
- a sidewall insulating layer that contacts a portion of an outer surface of the source/drain regions and that contacts the contact plugs.
24-25 (canceled)
Dependencies are inferred from the claim text.