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US 2021/0175346 A1Published application
Mos transistor spacers and method of manufacturing the same
AssigneeSTMicroelectronics (Rousset) SAS
InventorsArnaud REGNIER, Dann MORILLON, Franck JULIEN, Marjorie HESSE
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Abstract
A method of manufacturing a MOS transistor includes forming a conductive first gate and forming insulating spacers along opposite sides of the gate, wherein the spacers are formed before the gate.
Claims20
A MOS transistor comprising:
- a conductive gate;
- source and drain regions adjacent to the conductive gate;
- and
- first and second insulating spacers which are substantially parallelepiped-shaped and positioned on opposite sides of the conductive gate.
1 more element
An integrated circuit comprising:
- a first MOS transistor that includes:
- a conductive first gate;
- first source and drain regions adjacent to the first gate;
- and
- insulating first and second spacers which are substantially parallelepiped-shaped and positioned on opposite sides of the first gate;
- and
- a second MOS transistor.
4 more elements
A device, comprising:
- a first transistor, including:
- a first conductive gate;
- and
- first insulating spacers positioned on opposite sides of the first conductive gate, the first insulating spacers having a tapered shape;
- and
- a second transistor, including:
- a second conductive gate;
- and
- second insulating spacers positioned on opposite sides of the second conductive gate, the first insulating spacers having a substantially parallelepiped shape.
6 more elements
Dependencies are inferred from the claim text.