Fin-Like Field Effect Transistor Patterning Methods For Achieving Fin Width Uniformity

A device comprising:

• an active semiconductor fin and a dummy semiconductor fin extending from a substrate, wherein the active semiconductor fin is directly adjacent to the dummy semiconductor fin;
• a dielectric fin extending from the dummy semiconductor fin;
• and
• a metal gate that wraps a first portion of the active semiconductor fin and a first portion of the dielectric fin, wherein the metal gate is disposed between second portions of the active semiconductor fin and second portions of the dielectric fin.

A device comprising:

• a first fin-like field effect transistor (FinFET) and a second FinFET;
• and
• a first dielectric fin and a second dielectric fin disposed between first fins of the first FinFET and second fins of the second FinFET, wherein:
• the first fins, the second fins, the first dielectric fin, and the second dielectric fin extend substantially parallel to one another along a first direction,
• the first fins are separated by a first spacing along a second direction that is different than the first direction and the second fins are separated by a second spacing along the second direction, the first dielectric fin is separated from the first fins by the first spacing, the second dielectric fin is separated from the second fins by the second spacing, and
• the first dielectric fin is separated from the second dielectric fin by a third spacing along the second direction, wherein the third spacing is greater than the first spacing and the second spacing.