US 2021/0175339 A1 · SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME · patentgrep

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Abstract

According to one embodiment, a semiconductor device includes first, and second conductive members, first, second, and third semiconductor regions, and an insulating part. A direction from the first conductive member toward the second conductive member is along a first direction. The first semiconductor region includes first and second partial regions. A second direction from the first partial region toward the second partial region crosses the first direction. The first conductive member is between the first partial region and the second conductive member. A direction from the second partial region toward the second semiconductor region is along the first direction. A direction from the second conductive member toward the second semiconductor region is along the second direction. The third semiconductor region is between the second partial region and the second semiconductor region. The insulating part includes a first insulating region, a second insulating region, and a third insulating region.

Claims20

Dependent claims

A semiconductor device, comprising:

a first conductive member;
a second conductive member, a direction from the first conductive member toward the second conductive member being along a first direction;
a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region and a second partial region, a second direction from the first partial region toward the second partial region crossing the first direction, the first conductive member being between the first partial region and the second conductive member in the first direction;
a second semiconductor region of the first conductivity type, a direction from the second partial region toward the second semiconductor region being along the first direction, a direction from a portion of the second conductive member toward the second semiconductor region being along the second direction;
a third semiconductor region of a second conductivity type, the third semiconductor region being between the second partial region and the second semiconductor region in the first direction, a direction from an other portion of the second conductive member toward the third semiconductor region being along the second direction;
and
an insulating part including
a first insulating region provided between the first partial region and the first conductive member in the first direction,
a second insulating region provided between the second semiconductor region and the portion of the second conductive member in the second direction, and
a third insulating region provided between the third semiconductor region and the other portion of the second conductive member in the second direction,
a void being between the first conductive member and the second conductive member.

8 more elements

A semiconductor device, comprising:

a first conductive member;
a second conductive member, a direction from the first conductive member toward the second conductive member being along a first direction;
a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region and a second partial region, a second direction from the first partial region toward the second partial region crossing the first direction, the first conductive member being between the first partial region and the second conductive member in the first direction;
a second semiconductor region of the first conductivity type, a direction from the second partial region toward the second semiconductor region being along the first direction, a direction from a portion of the second conductive member toward the second semiconductor region being along the second direction;
a third semiconductor region of a second conductivity type, the third semiconductor region being provided between the second partial region and the second semiconductor region in the first direction, a direction from an other portion of the second conductive member toward the third semiconductor region being along the second direction;
and
an insulating part including
a first insulating region provided between the first partial region and the first conductive member in the first direction,
a second insulating region provided between the second semiconductor region and the portion of the second conductive member in the second direction, and
a third insulating region provided between the third semiconductor region and the other portion of the second conductive member in the second direction,
the first conductive member including a first surface facing the second conductive member,
the first surface being concave.

9 more elements

A semiconductor device, comprising:

a first conductive member;
a second conductive member, a direction from the first conductive member toward the second conductive member being along a first direction;
a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a second direction from the third partial region toward the second partial region crossing the first direction, the first partial region being between the third partial region and the second partial region in the second direction, the first conductive member being between the first partial region and the second conductive member in the first direction, the first conductive member being between the fourth partial region and the fifth partial region in the second direction;
a second semiconductor region of the first conductivity type, the second semiconductor region including a first semiconductor portion and a second semiconductor portion, a direction from the second semiconductor portion toward the first semiconductor portion being along the second direction, the fourth partial region being between the third partial region and the first semiconductor portion in the first direction, the fifth partial region being between the second partial region and the second semiconductor portion in the first direction, a portion of the second conductive member being between the first semiconductor portion and the second semiconductor portion;
a third semiconductor region of a second conductivity type, the third semiconductor region including a third semiconductor portion and a fourth semiconductor portion, the third semiconductor portion being between the fourth partial region and the first semiconductor portion in the first direction, the fourth semiconductor portion being between the fifth partial region and the second semiconductor portion in the first direction, an other portion of the second conductive member being between the third semiconductor portion and the fourth semiconductor portion in the second direction;
and
an insulating part including
a first insulating region provided between the first partial region and the first conductive member in the first direction,
a second insulating region provided between the third semiconductor portion and the other portion of the second conductive member in the second direction,
a third insulating region provided between the fourth semiconductor portion and the other portion of the second conductive member in the second direction,
a fourth insulating region provided between the fourth partial region and the first conductive member in the second direction, and
a fifth insulating region provided between the first conductive member and the fifth partial region in the second direction,
the fourth insulating region including a first side surface facing the fourth partial region,
the fifth insulating region including a second side surface facing the fifth partial region,
the second insulating region including a third side surface facing the third semiconductor portion,
the third insulating region including a fourth side surface facing the fourth semiconductor portion,
a first distance along the second direction between the first side surface and the second side surface being greater than a second distance along the second direction between the third side surface and the fourth side surface.

14 more elements

A semiconductor device, comprising:

a first conductive member;
a second conductive member, a direction from the first conductive member toward the second conductive member being along a first direction;
a third conductive member, a second direction from the first conductive member toward the third conductive member crossing the first direction;
a fourth conductive member, a direction from the third conductive member toward the fourth conductive member being along the first direction, a direction from the second conductive member toward the fourth conductive member being along the second direction;
a fifth conductive member provided between the second conductive member and the fourth conductive member in the second direction;
a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, a third partial region, and a fourth partial region, the third partial region being between the first partial region and the second partial region in the second direction, a direction from the first partial region toward the second conductive member being along the first direction, a direction from the second partial region toward the fourth conductive member being along the first direction, a direction from the third partial region toward the fifth conductive member being along the first direction, the fourth partial region being between the third partial region and the fifth conductive member in the first direction, the fourth partial region being between the first conductive member and the third conductive member in the second direction;
a second semiconductor region of the first conductivity type, the second semiconductor region including a first semiconductor portion and a second semiconductor portion, at least a portion of the first semiconductor portion being between the second conductive member and the fifth conductive member in the second direction, at least a portion of the second semiconductor portion being between the fifth conductive member and the fourth conductive member in the second direction;
a third semiconductor region of a second conductivity type, the third semiconductor region including a third semiconductor portion and a fourth semiconductor portion, the third semiconductor portion being between the first semiconductor region and the first semiconductor portion in the first direction, the fourth semiconductor portion being between the first semiconductor region and the second semiconductor portion in the first direction, the third semiconductor portion being between the second conductive member and the fifth conductive member in the second direction, the fourth semiconductor portion being between the fifth conductive member and the fourth conductive member in the second direction;
and
an insulating part including
a first insulating region provided between the first partial region and the first conductive member in the first direction,
a second insulating region provided between the second partial region and the third conductive member in the first direction,
a third insulating region provided between the fourth partial region and the fifth conductive member in the first direction,
a fourth insulating region provided between the first conductive member and the fourth partial region in the second direction, and
a fifth insulating region provided between the fourth partial region and the third conductive member in the second direction,
the fourth partial region contacting the third insulating region, the fourth insulating region, and the fifth insulating region.

13 more elements

A semiconductor device, comprising:

a first conductive member;
a second conductive member, a direction from the first conductive member toward the second conductive member being along a first direction;
a third conductive member, the third conductive member including a first conductive portion and a second conductive portion, the first conductive portion being provided between the first conductive member and the second conductive member;
a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, a third partial region, and a fourth partial region, a second direction from the first partial region toward the second partial region crossing the first direction, the first conductive member being between the first partial region and the second conductive member in the first direction;
a second semiconductor region of the first conductivity type, a direction from the second partial region toward the second semiconductor region being along the first direction, a direction from a portion of the second conductive member toward the second semiconductor region being along the second direction, the third partial region being between the second partial region and the second semiconductor region in the first direction, the second conductive portion being between the third partial region and the second semiconductor region in the first direction;
a third semiconductor region of a second conductivity type, the third semiconductor region being provided between the second conductive portion and the second semiconductor region in the first direction, a direction from an other portion of the second conductive member toward the third semiconductor region being along the second direction;
a fourth semiconductor region of the first conductivity type, the fourth semiconductor region being between the second conductive portion and the third semiconductor region in the first direction;
and
an insulating part including
a first insulating region provided between the first conductive member and the first conductive portion, and
a second insulating region provided between the first conductive portion and the second conductive member.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/017,332Filed 10 Sep 2020
Priority: JP 2019-2213696 Dec 2019
Published: 10 Jun 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification17 codes

H10D 30/668
Vertical dmos [vdmos] fets: having trench gate electrodes, e.g. UMOS transistors
H10D 64/513
Disposition of the gate electrodes, e.g. buried gates: within recesses in the substrate, e.g. trench gates, groove gates or buried gates
H10D 30/0289
Of lateral dmos [ldmos] fets: using recessing of the gate electrodes, e.g. to form trench gate electrodes
H10D 30/63
Insulated-gate field-effect transistors [IGFET]: vertical IGFETs

Family

US 11,404,550 B2Related patent
US 2021/0175339 A1This patent

From the US filing history. Foreign family members aren’t listed.

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