Silicided source/drain terminals for field-effect transistors

A structure comprising:

• a semiconductor layer having a top surface;
• a first field-effect transistor including a first source/drain terminal and a second source/drain terminal, the first source/drain terminal and the second source/drain terminal each including a first fully-silicided section located at and above the top surface of the semiconductor layer;
• a second field-effect transistor including a third source/drain terminal and a fourth source/drain terminal, the third source/drain terminal and the fourth source/drain terminal each including a first partially-silicided section located above the top surface of the semiconductor layer;
• and
• a third field-effect transistor including a fifth source/drain terminal and a sixth source/drain terminal, the fifth source/drain terminal and the sixth source/drain terminal each including a second partially-silicided section located above the top surface of the semiconductor layer,
• wherein the first field-effect transistor is a p-type field-effect transistor, an n-type field-effect transistor, or an ambipolar field-effect transistor, the second field-effect transistor is a p-type field-effect transistor, and the third field-effect transistor is an n-type field-effect transistor.

A method comprising:

• forming a first source/drain terminal and a second source/drain terminal of a first field-effect transistor that each include a first fully-silicided section located at and above a top surface of a semiconductor layer;
• and
• forming a third source/drain terminal and a fourth source/drain terminal of a second field-effect transistor that each include a first partially-silicided section located above the top surface of the semiconductor layer,
• wherein the first fully-silicided section of the first source/drain terminal comprises a first section of a silicide layer, the first fully-silicided section of the second source/drain terminal comprises a second section of the silicide layer, and the first partially-silicided section of the third source/drain terminal includes a third section of the silicide layer, and the first partially-silicided section of the fourth source/drain terminal includes a fourth section of the silicide layer.