Semiconductor device and semiconductor device manufacturing method

A semiconductor device comprising:

• a first region comprising a plurality of elements;
• a second region comprising a plurality of dummy elements;
• and
• a third region comprising a plurality of elements and a plurality of dummy elements,
• wherein the second region is provided in an outer edge of the first region and an outer edge of the third region, and
• wherein the plurality of elements of the first region, the plurality of dummy elements of the second region, and the plurality of elements and the plurality of dummy elements of the third region, each comprise an oxide semiconductor.

A method of manufacturing a semiconductor device comprising:

• wherein the semiconductor device comprising:
• a first region comprising a plurality of first elements over a substrate;
• a second region comprising a plurality of second elements over the substrate;
• and
• a third region comprising a plurality of dummy elements between the first region and the second region over the substrate, and
• wherein a first element of the plurality of first elements, a second element of the plurality of second elements, and a dummy element of the plurality of dummy elements, each comprise an oxide semiconductor,
• after the first element, the second element, and the dummy element are provided in the same step, forming a first chip comprising the first region and a second chip comprising the second region by cutting the substrate along the third region.