Flexible integrated array sensor and wafer-level manufacturing process thereof

A method of manufacturing a wafer-level flexible integrated array sensor, the method comprising:

• fabricating function arrays on a surface of a silicon wafer by
• forming a readout circuit layer with readout circuit units disposed on the silicon wafer,
• forming a sensing array layer with sensing units stacked on the readout circuit layer,
• forming function units by electronically connecting a corresponding sensing unit and a corresponding readout circuit unit, and
• forming the function arrays by distributing the function units in m*n arrays on the silicon wafer, wherein each of the function arrays include one m*n array of function units;
• etching one or more grooves on a surface of the silicon wafer between the function arrays to isolate defects propagation during a thinning process and separate the function arrays from each other, wherein an etching depth of each of the grooves is equal to or greater than a target thickness of the silicon wafer after subsequent thinning;
• fabricating a top polymer substrate layer above each of the function arrays;
• patterning the top polymer substrate layer;
• fabricating a thinning support above the function arrays;
• performing the thinning process by thinning a bottom surface of the silicon wafer to the target thickness, wherein the bottom surface of the silicon wafer is a surface of the silicon wafer away from the function array;
• and
• removing the thinning support to separate the function arrays into a plurality of flexible integrated array sensors, wherein two neighboring array sensors of the plurality of flexible integrated array sensors are separated by one of the grooves.