Thin film transistor array substrate for digital x-ray detector device and digital x-ray detector device including the same

A thin film transistor array substrate for a digital X-ray detector device, comprising:

• a base substrate;
• an active layer disposed above the base substrate;
• a gate insulating layer disposed above the active layer;
• a gate electrode disposed on the gate insulating layer;
• an interlayer insulating layer disposed on the gate electrode;
• a first electrode disposed on the interlayer insulating layer and configured to connect to the active layer through a first contact hole in the interlayer insulating layer and a second electrode disposed on the interlayer insulating layer and configured to connect to the active layer through a second contact hole in the interlayer insulating layer;
• and
• a PIN diode comprising a lower electrode electrically connected to the second electrode, a PIN layer, and an upper electrode,
• wherein the PIN layer comprises a p+ type semiconductor layer, a p− type semiconductor layer, an intrinsic semiconductor layer, an n− type semiconductor layer, and an n+ type semiconductor layer.

A digital X-ray detector device, comprising:

• a base substrate;
• a driving thin film transistor disposed above the base substrate;
• and
• a PIN (p type semiconductor-intrinsic type semiconductor-n type semiconductor) diode connected to the driving thin film transistor and comprising a lower electrode, a PIN layer, and an upper electrode,
• wherein the PIN layer comprises a p+ type semiconductor layer, a p− type semiconductor layer, an intrinsic semiconductor layer, an n− type semiconductor layer, and an n+ type semiconductor layer.
• a scintillator layer disposed above the base substrate.